Navitas semiconductor (NASDAQ: NVTS), the industry leader in gallium nitride (GaN) power chips, announced the launch of a new generation of smart GaNFast gallium nitride power chips with GaNSense technology. GaNSense technology integrates critical, real-time, intelligent sensing and protection circuits, further improving NanoMicro’s industry-leading reliability and robustness in power semiconductors, while adding energy saving and fast charging of NanoMicro’s GaN power chip technology Advantage.
Gallium Nitride (GaN) is the next-generation semiconductor material, GaN devices can switch 20 times faster than traditional silicon devices, and can achieve up to 3 times the power and 3 times the charging at half the size and weight speed. NanoMicro’s GaNFast™ GaN power chips integrate GaN devices and drive as well as protection and control functions to provide simple, small, fast and efficient performance.
GaNSense technology integrates real-time, accurate and fast sensing of system parameters, including current and temperature sensing. This technology enables a patent-pending lossless current sensing capability. Compared to previous generations, GaNSense technology delivers an additional 10% energy savings and enables further reductions in external component count and system size. Additionally, if a GaN power chip identifies a potential system hazard, the chip will rapidly transition to a cycle-by-cycle shutdown to protect the device and surrounding systems. GaNSense technology also integrates the intelligent standby power reduction function, which automatically reduces standby power consumption when the GaN power chip is in idle mode, helping to further reduce power consumption. This is especially important for more and more customers who are actively pursuing environmental protection.
With the industry’s tightest current measurement accuracy and GaNFast response time, GaNSense technology reduces critical time by 50% and critical overcurrent peaks by 50%. The monolithic integration of GaNFast gallium nitride power chips provides reliable, trouble-free operation without “ringing”, thereby increasing system reliability.
“From detection to protection in just 30 nanoseconds, GaNSense technology is 600 percent faster than discrete gallium nitride power chip implementations,” said Dan Kinzer, co-founder and COO/CTO of NanoMicro Semiconductor. Next-generation GaNFast GaN power chip products with GaNSense technology provide highly accurate and effective protection against potential system failure modes. Coupled with immunity to transient voltages up to 800V and tight gate waveform control and Voltage regulation, functions only possible through our proprietary process design kit, redefines new standards of reliability, robustness and performance in power semiconductors.”
There are ten models of the new generation of nano-micro GaNFast gallium nitride power chips using GaNSense technology. They all integrate the core technologies of GaN power devices, GaN drive, control and protection. All products are rated at 650V/800V. , with 2kV ESD protection. The new GaNFast power chip has an RDS(ON) range of 120 to 450 milliohms and is available in a 5 x 6 mm or 6 x 8 mm PQFN package with GaNSense protection circuitry and lossless current sensing. As Nano-Micro’s third-generation GaN power chip, optimized for modern power conversion topologies, including high frequency quasi-resonant flyback (HFQR), active clamp flyback (ACF) and PFC boost, these Both are popular technical methods of providing the fastest, most efficient and smallest chargers and adapters in the mobile and consumer markets.
Target markets include fast-charging chargers for smartphones and laptops, an estimated $2 billion annual gallium nitride market opportunity, and a $2 billion annual consumer market opportunity, including all-in-ones, TVs, home networking and automation equipment. GaNSense technology has been used in the GaN chargers of some first-tier consumer electronics brands.
To date, more than 30 million nano-micro GaNFast gallium nitride power chips have been shipped, and more than 116 billion device hours have been achieved in field testing, and there have been no reports of GaN field failures. Compared with traditional silicon power chips, each shipped GaNFast gallium nitride power chip can reduce carbon footprint by 4-10 times and save 4 kg of carbon dioxide emissions.
The next-generation nano-micro GaNFast power chip with GaNSense technology will be publicly demonstrated at the following events.
· November 8: WiPDA 2021 presentation (online) by Dan Kinzer, COO/CTO and co-founder of NanoMicro
· November 14: Nano-Micro Semiconductor Satellite Conference at the 24th Annual Academic Conference of China Power Supply Society (Shanghai, offline), speaker: Dr. Huang Xiucheng, Director of Nano-Micro Semiconductor Application Engineering
· November 18: PSMA Power Technology Roadmap Presentation (online) by Dan Kinzer, COO/CTO and Co-founder of NanoMicro
The next-generation GaNFast gallium nitride power chip with GaNSense technology has started mass production and is available immediately. Full technical details of the new GaNSense technology, including data sheets, qualification data, application notes and samples, are available to customer partners upon signing of a non-disclosure agreement.
About Nano Micro Semiconductor:
Founded in 2014, Nano Micro Semiconductor (NASDAQ: NVTS) is an industry leader in gallium nitride power chips. GaN power chips integrate GaN power with drive, control and protection to provide faster charging, higher power density and better energy efficiency for mobile devices, consumer products, enterprises, electric vehicles and new energy markets product. Nano Micro has more than 130 patents issued or pending, more than 30 million GaNFast power chips have been shipped, and there are no field failure reports for Nano Micro GaN power chips. On October 20, 2021, Navitas rang the opening bell of the Nasdaq and began trading on the Nasdaq with an enterprise value of more than $1 billion and a total financing of more than $320 million.
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