Durham, NC, USA, April 14, 2021 – Cree, Inc. (Nasdaq: CREE), a global leader in silicon carbide technology, announced that Cree | Wolfspeed has recently introduced four new multipolar carbide Gallium Nitride-on-Silicon (GaN-on-SiC) monolithic microwave integrated circuit (MMIC) devices, further expanding the range of radio frequency (RF) solutions for applications including maritime, weather monitoring and emerging radar for unmanned aerial systems pulsed and continuous wave X-band phased array applications.
Using Wolfspeed GaN-on-SiC technology, these new devices deliver high power-added efficiency (PAE) in a small, industry-standard package, enabling designers to maximize performance and power consumption in smaller systems less.
“Cree|Wolfspeed’s new X-band devices provide design engineers with a wealth of options for systems requiring high-efficiency launch solutions within demanding dimensions, such as Those required in active phased array radar applications. Adoption of Wolfspeed GaN-on-SiC solutions will enable the smaller size, lighter weight, higher power (SWaP), And performance reaches new heights.”
A broad X-band product portfolio provides solutions that support multiple gain stages, reducing the number of components required in the transmit chain. They include different power levels to optimize system performance and provide multiple platforms to optimize system architecture. Browse Table 1 for more product details and performance data.
New amplifiers continue to expand the product portfolio. Their outstanding performance showcases Cree | Wolfspeed’s decades of GaN-on-SiC expertise, helping to support markets such as aerospace. It also reflects the relentless pursuit of developing innovative, industry-leading gallium nitride (GaN) solutions for a wide range of RF applications.
Note: All devices listed above have ECCN as 3A001.b.2
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