Accelerating the development of the third-generation semiconductor industry, this material company officially entered the Science and Technology Innovation Board

According to the website of the Shanghai Stock Exchange, on December 25, Zhejiang Brant semiconductor Technology Co., Ltd. (hereinafter referred to as “Brante Semiconductor”) IPO listing application on the Science and Technology Innovation Board was officially accepted.

According to the data, Branta Semiconductor was established in 2012 and has been deeply involved in the field of semiconductor materials for many years. It is mainly engaged in the research and development and application of new semiconductor materials, devices and related equipment, focusing on the research and development of patterned sapphire, silicon carbide and other semiconductor substrates and devices, Production, sales, and upgrading and sales of semiconductor process equipment. At present, the main products include PSS, silicon carbide substrates and lithography machine transformation equipment.

It is understood that Brent Semiconductor attaches great importance to R&D work. From 2017 to 2019, the company’s R&D expenses and proportions showed an upward trend, which were 10.8296 million yuan, 16.4813 million yuan and 25.0669 million yuan respectively, accounting for the proportion of the operating income of the year respectively. 3.73%, 4.12% and 7.21%; the cumulative R&D investment in the past three years totaled 52.3778 million yuan, accounting for 5.05% of the cumulative operating income in the past three years, higher than 5%.

The prospectus (declaration draft) shows that Brant Semiconductor plans to raise 505 million yuan this time. After deducting the issuance expenses, the funds will be used for investment in projects related to the main business, including the annual output of 3 million Mini/Micro-LED chips. The patterned sapphire substrate project, the annual output of 5.4 million sapphire substrate projects, and the third-generation semiconductor R&D center construction project.

Among them, the “third-generation semiconductor R&D center construction project” will provide technical support for the development of Branta Semiconductor’s main business to extend the research and development of new products in the industry. The specific research and development product directions include the third-generation semiconductor silicon carbide, GaN substrate (epitaxial) Materials, deep ultraviolet LED chips, high-brightness blue-green LED chips.

Branta Semiconductor said that since its establishment, the company has been committed to the research and development, production and sales of semiconductor substrate materials. The construction project of the third-generation semiconductor R&D center will provide technical support for the development of new products for the company’s main business development, including third-generation semiconductor products such as silicon carbide, GaN substrates, epitaxial preparation, and wide-bandgap semiconductor materials represented by R&D. , and deep ultraviolet LED chips; high-brightness blue and green LED chip design and research and development, by improving the company’s research and development level, and extending the research and development of related products in the industry chain.

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